• 专利标题:   Graphene strip structure manufacturing method, involves forming groove on first medium layer substrate, forming catalyst layer on first medium layer substrate, and forming catalyst layer on groove.
  • 专利号:   CN104779287-A, CN104779287-B
  • 发明人:   SU Y, ZHU H, ZHAO C, GU K
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L021/336, H01L029/06, H01L029/78
  • 专利详细信息:   CN104779287-A 15 Jul 2015 H01L-029/78 201566 Pages: 10 Chinese
  • 申请详细信息:   CN104779287-A CN10012588 10 Jan 2014
  • 优先权号:   CN10012588

▎ 摘  要

NOVELTY - The method involves forming a groove on a first medium layer substrate. A catalyst layer is formed on the first medium layer substrate. The catalyst layer is formed on the groove. The catalyst layer is covered on a second medium layer substrate. A deposition process is performed. Substrate planarization process is performed. Thickness of the catalyst layer is about 10 mm. A laminated structure is formed. USE - Graphene strip structure manufacturing method. ADVANTAGE - The method enables manufacturing graphene strip structure in a convenient manner with low occupied space. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a graphene strip structure (2) a graphene strip device manufacturing method (3) a graphene strip device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene strip device.