▎ 摘　　要

NOVELTY - Manufacture of semiconductor device involves providing a substrate (100) having a patterned film comprising manganese, depositing a graphene layer (118) over exposed surfaces of the patterned film, depositing a dielectric layer (102) containing silicon and oxygen over the layer (118), and heat-treating the substrate to form a manganese-containing diffusion barrier region (122) between the layers (118) and (102). USE - Manufacture of semiconductor device (claimed) for microelectronic device. ADVANTAGE - The method provides semiconductor device with improved electrical conductivity and reduced copper interconnect resistivity. The method minimizes barrier thickness surrounding scaled copper (Cu) interconnects to reduce resistance for future microelectronic devices. The manganese-containing diffusion barrier layer prevents copper diffusion and electromigration into the dielectric layer, thus improving the reliability of the semiconductor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor device. 100Semiconductor substrate 102,120Dielectric layers 104Barrier layer 118Graphene barrier layer 122Diffusion barrier region