▎ 摘　　要

NOVELTY - Silicon substrate having size of 4-12 inches is cleaned, heated and carbonized. Propane gas is supplied, substrate is carbonized and a carbon film is formed. The carbon film is rapidly heated, propane and silane are supplied, 3C-SiC heteroepitaxial film growth is carried out, and reduced to form 3C-SiC heteroepitaxial film. The grown sample is heated and reacted with carbon tetrachloride to form a bilayer carbon film. The bilayer carbon film sample is placed in argon gas reaction, annealed at 1000 degrees C for 10-20 minutes, and bilayer graphene is formed. USE - Formation of graphene on 3C-silicon carbide substrate. ADVANTAGE - The bilayer graphene having large area, smooth surface and low porosity, is formed. DETAILED DESCRIPTION - Silicon substrate having size of 4-12 inches is cleaned and cleaned silicon substrate is placed in a chemical vapor deposition reaction chamber. The reaction chamber is vacuumized under 10-7 mbar, heated and carbonized at 950-1150 degrees C under shielding of hydrogen. Propane gas is supplied at flow rate of 30 ml/minute, substrate is carbonized for 3-7 minutes, and a carbon film is formed. The carbon film is rapidly heated at growth temperature of 1150-1300 degrees C, propane and silane are supplied, 3C-SiC heteroepitaxial film growth is carried out for 36-60 minutes, and reduced to room temperature under hydrogen atmosphere to form 3C-SiC heteroepitaxial film. The grown sample is placed in a quartz tube, and heated at 800-1000 degrees C. carbon tetrachloride steam is supplied and sample is heated at 60-80 degrees C using argon gas and reacted with carbon tetrachloride for 30-120 minutes, to form a bilayer carbon film. The flow rate of argon gas is 50-80 ml/minute. The bilayer carbon film sample is placed in argon gas reaction, annealed at 1000 degrees C for 10-20 minutes, and bilayer graphene is formed.