▎ 摘　　要

NOVELTY - Silica layer and physical vapor deposition catalyst film are sequentially formed on silicon substrate, substrate is placed in chemical vapor deposition (CVD) device, argon and hydrogen gases are introduced, CVD device is heated, methane gas is passed, left, supply of methane is closed, and CVD device is rapidly cooled. Obtained graphene film sample is placed in etching agent, a portion of film is etched, and then, obtained graphene oxide film is transfer-printed on flexible substrate from the silicon substrate. Thus, preparation of flexible conductive film is carried out. USE - Preparation of flexible conductive film. ADVANTAGE - The method provides flexible conductive film having favorable conductivity, foldability and bendability and damage resistance under high temperature environment. DETAILED DESCRIPTION - A silica layer and a physical vapor deposition catalyst film are sequentially formed on silicon substrate, the substrate is placed in chemical vapor deposition (CVD) device, argon and hydrogen gases are introduced with high flow rate, at same time the CVD device is heated at 800-1100 degrees C, then methane gas is passed, left, supply of methane is closed, and the CVD device is rapidly cooled to room temperature, to obtain graphene film sample. The obtained graphene film sample is placed in etching agent, a portion of film is etched, and then, obtained graphene oxide film is transfer-printed on flexible substrate from the silicon substrate, by transfer printing process. Thus, preparation of flexible conductive film is carried out.