▎ 摘　　要

NOVELTY - A self-organized epitaxial gallium nitride material on graphene growing method involves growing metastatic graphene film on substrate. The substrate is annealed in metalorganic chemical vapor deposition (MOCVD) reaction chamber with MOCVD technology and self-organized nucleation sites are formed in the graphene film. Nucleating layer is grown and annealed to achieve crystallization of nucleation layer. Self-organized epitaxial gallium nitride material is grown after change in temperature. USE - Method for growing self-organized epitaxial gallium nitride material on graphene. ADVANTAGE - The method enables growing the self-organized epitaxial gallium nitride material on graphene with improved graphene nucleation sites, facilitating formation of nucleation layer of graphene and increasing crystal quality of gallium nitride material, efficiency and service life.