▎ 摘　　要

NOVELTY - Preparation of graphene involves adding substrate and solid activated carbon to plasma-enhanced chemical vapor deposition apparatus having different temperature zones, heating substrate and solid activated carbon in corresponding temperature zone, passing a gas, opening plasma generator, growing graphene, stopping heating, continuing passing of gas, rapidly cooling to room temperature, and uniformly growing graphene on substrate surface. USE - Preparation of graphene by plasma-enhanced chemical vapor deposition (claimed). ADVANTAGE - The method enables economical preparation of graphene by plasma-enhanced chemical vapor deposition by growing graphene at low temperature. The graphene is high-quality single or multi-layered graphene.