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  • 专利标题:   Integrated assembly e.g. transistor, comprises semiconductor material having more doped region adjacent less doped region, and two-dimensional material between doped regions.
  • 专利号:   WO2021030026-A1, US2021050443-A1, US11211487-B2, US2022069124-A1, KR2022045018-A, CN114450803-A, US11658242-B2
  • 发明人:   KARDA K M, MOULI C, LIU H
  • 专利权人:   MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC
  • 国际专利分类:   H01L027/108, H01L029/08, H01L029/10, H01L029/423, H01L029/78, H01L029/04, H01L029/06, H01L029/267, H01L029/45, H01L029/786
  • 专利详细信息:   WO2021030026-A1 18 Feb 2021 H01L-029/10 202122 Pages: 31 English
  • 申请详细信息:   WO2021030026-A1 WOUS043222 23 Jul 2020
  • 优先权号:   US542078, US524653, KR707976, CN80064284

▎ 摘　　要

NOVELTY - An integrated assembly comprises a semiconductor material having more doped region adjacent a less doped region, and a two-dimensional material between the more doped region and a portion of the less-doped region. USE - Integrated assembly e.g. transistor (Claimed). Uses include but are not limited to cameras, wireless devices, displays, chip sets, set top boxes, games, lighting, vehicles, clocks, televisions, cell phones, personal computers, automobiles, industrial control systems and aircraft. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) transistor; and (2) memory structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side view of integrated assemblies. Channel region (12) Barrier region (18) Transistor (32) Channel region (38) Gate material (40)