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  • 专利标题:   Interconnection structure, has graphene layer arranged between first graphene layer and second graphene layer, where second graphene layer is arranged between conductive feature and dielectric material.
  • 专利号:   CN115566001-A, US2023067886-A1, TW202310297-A
  • 发明人:   SUI X, ZHANG X, HUANG X, YANG G, CAI C, LEE S, LI S, SHUE S, CHANG H, HUANG H, YANG K, TSAI C, LEE C
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   H01L021/768, H01L023/528, H01L023/532, H01L023/535, H01L029/06, H01L029/40, H01L029/417, H01L029/423, H01L029/45, H01L029/786
  • 专利详细信息:   CN115566001-A 03 Jan 2023 H01L-023/532 202310 Chinese
  • 申请详细信息:   CN115566001-A CN10963683 11 Aug 2022
  • 优先权号:   US460168

▎ 摘　　要

NOVELTY - The structure has a first conductive feature fixed in a dielectric layer. A second conductive feature is fixed above the first conductive feature. A third conductive feature is fixed adjacent to the second conductive feature. A dielectric material is fixed between the second conductive feature and the third conductive feature. A graphene layer is arranged between a first graphene layer and a second graphene layer. The second graphene layer is arranged between the third conductive feature and the dielectric material. USE - Interconnection structure. ADVANTAGE - The structure has high electrical properties and performance, and improves thermal stability. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an interconnection structure.