▎ 摘　　要

NOVELTY - Method for processing substrates (100) involves providing a semiconductor substrate, where the semiconductor substrate comprises a metal layer (101) formed in a dielectric layer and a barrier layer between the metal layer and the dielectric layer, the metal layer has an exposed metal surface and the barrier layer has an exposed barrier surface, selectively depositing graphene on the exposed metal surface, after selectively depositing graphene on the exposed metal surface, selectively depositing an inhibitor layer on the exposed barrier surface, and selectively depositing a dielectric material on the dielectric layer. USE - The method is used for processing substrates, where the substrates are useful in a semiconductor device, where the semiconductor devices are integrated circuits. ADVANTAGE - The method enables to process semiconductor substrate that has high electrical conductivity, high thermal conductivity and good mechanical strength and toughness, optical transparency, and high electron mobility, among other favorable properties. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a semiconductor device; and an apparatus for processing substrates. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a substrate stack. 100Substrate 101Metal layer 102Graphene film