▎ 摘　　要

NOVELTY - The method involves obtaining graphene growth sample in a hexagonal etching area. Corners of the hexagonal etching area are analyzed corresponding to orientation growth sample. Judgment is made to check whether the corners of the hexagonal etching area are consistent corresponding to the orientation growth sample. Polycrystalline growth sample is obtained when the corners of the hexagonal etching area are not consistent, where vacuum degree of a vacuum heating furnace is greater than 100 Pa. USE - Method for characterizing graphene crystalline state. ADVANTAGE - The method enables carrying out a graphene crystalline state characterizing process in a simple and an easy manner. The method enables avoiding particular characteristic sample preparing requirement so as to avoid generation of error during particular sample processing process. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method for characterizing graphene crystalline state.