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  • 专利标题:   Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.
  • 专利号:   CN111705359-A
  • 发明人:   ZHANG X, WU T, WANG H, YU Q, XIE X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C30B025/18, C30B029/02, C23C014/35, C23C014/18
  • 专利详细信息:   CN111705359-A 25 Sep 2020 C30B-025/18 202089 Pages: 12 Chinese
  • 申请详细信息:   CN111705359-A CN10620665 30 Jun 2020
  • 优先权号:   CN10620665

▎ 摘　　要

NOVELTY - Preparing graphene single crystal wafer on copper-based textured film substrate comprises (a) providing a copper-based textured film substrate, and placing the substrate in a chemical vapor deposition system for annealing treatment, and (b) introducing a gaseous carbon source, and epitaxially growing a graphene single crystal wafer on the surface of the substrate. USE - The product is useful in microelectronics field. ADVANTAGE - The method is economical.