▎ 摘　　要

NOVELTY - The analyzing method involves providing a graphene layer over the substrate surface, annealing the graphene-coated substrate at elevated temperature and reduced pressure, and sputtering of the graphene-coated substrate in dSIMS. The ejected secondary anions are detected and analyzed by mass spectrometry analysis. USE - Analyzing method of solid substrate by SIMS for characterizing surfaces, two-dimensional (2D) materials, ultra-thin films, 2D and three-dimensional (3D) imaging, depth profiling and concentration analysis, and determining concentration of trace elements in thin support. ADVANTAGE - Provides a new SIMS technique allowing to enhance detection limit in case of analysis of thin materials. Reduces the initial strong blocking effect of graphene with respect to partial sputter yield, while the enhancement of the ionization probability of the sputtered material is still observed since the graphene layer is preserved to a large extent on the substrate surface. The possible problems associated with difficulties in determining whether signal intensity changes result from the change of concentration of a given dopant or from changing ionization probability due to graphene layer damage, are avoided. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a use of analyzing method of solid substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a graph of the changes of gain factor during dynamic SIMS mode for three different primary beam intensities.