▎ 摘　　要

NOVELTY - The fabrication method involves forming back-gate (610) dielectric layer over a conductive substrate, forming graphene layer over the back-gate dielectric layer, and forming contacts over a portion of the graphene layer including source contact. The drain contact and side-gate contact are formed in graphene layer between source contact. A top-gate (650) dielectric layer is formed over graphene layer, while top-gate electrode is formed over the graphene channel. USE - Fabrication method of graphene-based electronic nanoconstriction device. ADVANTAGE - Provides immunity to impurities induced by edge defects since the graphene channel geometry is easy to fabricate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic band diagram of the device. Graphene nanoconstriction device (600) Back gate (610) Graphene side gates (627,628) Channels (634,636) Top gate (650)