• 专利标题:   Preparation method of quantum dot LED, involves forming zinc oxide nano material on prefabricated device, preparing electronic transmission layer, and heating device after processing.
  • 专利号:   WO2022143551-A1, CN114695736-A
  • 发明人:   ZHOU L, YANG Y
  • 专利权人:   TCL TECHNOLOGY GROUP CORP, TCL TECHNOLOGY GROUP CORP
  • 国际专利分类:   H01L051/50, H01L051/54, H01L051/56
  • 专利详细信息:   WO2022143551-A1 07 Jul 2022 H01L-051/50 202263 Pages: 24 Chinese
  • 申请详细信息:   WO2022143551-A1 WOCN141739 27 Dec 2021
  • 优先权号:   CN11639291

▎ 摘  要

NOVELTY - The method involves providing a prefabricated device. Zinc oxide nanomaterials are formed on the prefabricated device to prepare an electron transport layer. The treated device is heat-treated such that the surface hydroxyl group of the electron transport layer is 0.15-0.6. The amount of surface hydroxyl groups of the zinc oxide nanomaterial is less than or equal to 0.4, and the temperature of the heat treatment is set with specific value. USE - Method for preparing quantum dot light-emitting diode. ADVANTAGE - The method enables to prepare quantum dot light emitting diode that has high brightness, low power consumption, wide color gamut, easy processing, self-luminous, full color display and solid illumination, and excellent optoelectronic performance and service life. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the change in the number of hydroxyl groups on the surface of the electron transport layer. Hole injection layer (2) Hole transport layer (3) Quantum dot light emitting layer (4) Electronic transmission layer (5) Negative electrode (6)