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  • 专利标题:   New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.
  • 专利号:   US2011313194-A1, JP2012001431-A, KR2011138611-A, CN102285660-A, US8664439-B2, CN102285660-B, KR1781552-B1
  • 发明人:   LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S
  • 专利权人:   S S, SEONG W Y, JONG J H, SEONG H J, HUH J, YEO R, JUNG HSAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B82Y030/00, B82Y040/00, C07F005/02, C23C016/22, C23C016/44, B82B001/00, C01B031/02, H01L021/336, H01L029/786, H01L051/05, H01L051/40, C23C016/30, H01L029/772, C01B035/00, H01L029/167
  • 专利详细信息:   US2011313194-A1 22 Dec 2011 C07F-005/02 201204 Pages: 9 English
  • 申请详细信息:   US2011313194-A1 US064896 25 Apr 2011
  • 优先权号:   KR058604

▎ 摘　　要

NOVELTY - Graphene comprising a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms, is new, where the graphene has a band gap. USE - The graphene is useful in a channel of a transistor (claimed). ADVANTAGE - The graphene exhibits excellent chemical stability, and a semi-metal characteristic. The band gap of graphene can be easily controlled by adjusting the amount of borazine. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a transistor, comprising a channel formed of the graphene; and (2) preparation of the graphene.