▎ 摘　　要

NOVELTY - The method involves forming an organic functional layer and a dielectric layer on a substrate to form a bottom electrode. A device layer is arranged on another substrate to form a top electrode. An organic functional layer is provided with polymer graphene quantum dots on the bottom electrode to form a film. The substrate is made of a glass, quartz, ceramic or flexible material. The bottom electrode is made of a metal, copper, tungsten, nickel, zinc, aluminum, tin-doped indium oxide, zinc oxide or silicon material. The top electrode is made of copper or silver. USE - Quantum dot doped organic resistance variable memory based graphene preparing method. ADVANTAGE - The method enables simplifying a process, ensuring better repeatability and stability and improving response speed and application value. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a quantum dot doped organic resistance variable memory based graphene.