▎ 摘　　要

NOVELTY - The electronic apparatus has graphene film formed on the insulating substrate(17), and protective film (14) consisting of the transition metal oxide that is formed on graphene film. An insulating layer is formed on the protective film, and an electrode is formed on the insulating layer. USE - Electronic apparatus e.g. transistor. ADVANTAGE - The polymeric materials, such as resist are not in contact with graphene directly at the time of transfer of graphene, such that the laminated structure by which the outlying carrier doping to the graphene by the polymeric residue of resist can be suppressed. The improvement and operational stability of an electrical property can be achieved and a reliable electronic apparatus can be obtained. The thin film formation of the gate insulating layer of high-k material is enabled. The improvement of the control efficiency of the carrier concentration of a graphene film and low-voltage operation can be achieved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a manufacturing method of laminated structure of electronic apparatus; and (2) a laminated structure. DESCRIPTION OF DRAWING(S) - The drawings show the sectional views illustrating the process for manufacturing laminated structure of electronic apparatus. (Drawing includes non-English language text) Substrate (11) Graphene layer (13) Protective film (14) Contact layer (15) Support layer (16) Insulating substrate (17)