▎ 摘　　要

NOVELTY - The VTFT (10) has a gate electrode (110). An insulating layer (120) is arranged on the gate electrode. A first electrode (130) is arranged on the insulating layer and including a hole. A channel layer (140) is arranged on the first electrode. A second electrode (150) is arranged on the channel layer. The first electrode comprises a two-dimensional material which is graphene (Graphene), black phosphorous (Black phosphorous), reduced graphene oxide (rGO), B3 H, B3 F, B3 Cl, Borophene, transition metal dichalcogenides (TMDC), silicene, germanene, stanene, hexagonal boron nitride, (h-BN) and a VTFT. USE - Vertical thin film transistor (VTFT). ADVANTAGE - The transistor induces a low off-current state through gate field penetration and change in Fermi level of the two-dimensional material by the gate field, so that turning on-off ratio can be greatly improved. The 2D material can control the 2D level, and electrical properties can be improved in a hole region and an electrode region. The transistor can be implemented in different applications, and is patterned at a time by photolithography so as to simplify manufacturing process of the transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a vertical thin film transistor. 10VTFT 110Gate electrode 120Insulating layer 130First electrode 140Channel layer 150Second electrode