▎ 摘　　要

NOVELTY - Copper seed layer is electroplated on silicon dioxide substrate. Metal seed layer containing copper, nickel/copper, gold, chromium/An (sic) or titanium-tungsten/copper is sputtered. The seed layer is electroplated with copper layer to obtain electroplated copper substrate. Graphene is grown on the electroplated copper substrate by heating at 800-1000 degrees C for 3-15 minutes under normal pressure in presence of hydrogen by chemical vapor deposition using methane as carbon source and mixed gas of argon and hydrogen as carrier gas, and cooled in argon atmosphere to obtain graphene film. USE - Preparation of graphene film. ADVANTAGE - The method economically provides large-area graphene film at high yield by simple process. DETAILED DESCRIPTION - Copper seed layer is electroplated on silicon dioxide substrate. Metal seed layer containing copper, nickel/copper, gold, chromium/An (sic) or titanium-tungsten/copper is sputtered. The seed layer is electroplated with copper layer in the electroplating current of 0.5-2.5 A for 10-100 minutes to obtain electroplated copper substrate. The copper plating layer has thickness of 2-10 mu m. Graphene is grown on the electroplated copper substrate by heating at 800-1000 degrees C for 3-15 minutes under normal pressure in presence of hydrogen by chemical vapor deposition using methane as carbon source and mixed gas of argon and hydrogen as carrier gas, and cooled along with furnace in argon atmosphere to obtain graphene film, or copper seed layer is electroplated on silicon dioxide substrate. Metal seed layer containing copper, nickel/copper, gold, chromium/An (sic) or titanium-tungsten/copper is sputtered. The seed layer is coated with a layer of photoresist by photoetching. The thickness of photoresist is 4-12 mu m. The obtained seed layer is electroplated with copper layer in the electroplating current of 0.5-2.5 A for 10-100 minutes to obtain electroplated copper substrate. The copper plating layer has thickness of 2-10 mu m. Graphene is grown on the electroplated copper substrate by heating at 800-1000 degrees C for 3-15 minutes under normal pressure in presence of hydrogen by chemical vapor deposition using methane as carbon source and mixed gas of argon and hydrogen as carrier gas, and cooled along with furnace in argon atmosphere to obtain graphene film. The flow rate of methane is 5-20 ml/minute. The volume ratio of argon and hydrogen in the mixed gas is 10:1-1:4.