• 专利标题:   Manufacture of zinc oxide/graphene photocatalyst used for treating industrial pollutants, involves adding seed crystal of zinc nitrate to graphene oxide, drying, placing dried samples in growth solution of zinc nitrate, and reducing.
  • 专利号:   CN104275175-A
  • 发明人:   LONG D, MA J, PENG M, TAN B
  • 专利权人:   HUNAN ELEMENT PASSWORD GRAPHENE RES INST
  • 国际专利分类:   B01J023/06
  • 专利详细信息:   CN104275175-A 14 Jan 2015 B01J-023/06 201526 Pages: 5 Chinese
  • 申请详细信息:   CN104275175-A CN10563803 22 Oct 2014
  • 优先权号:   CN10563803

▎ 摘  要

NOVELTY - Manufacture of zinc oxide/graphene photocatalyst involves adding aqueous ammonia to zinc nitrate hexahydrate to form growth medium, adding aqueous ammonia to 0.001-0.005 mol/L zinc nitrate hexahydrate to form seed crystal solution, adding seed crystal solution to graphene oxide, heating at 80-90 degrees C for 30 minutes, filtering, washing, drying, placing the dried samples in growth solution, heating, washing, drying to obtain zinc oxide/graphene oxide, reducing zinc oxide/graphene oxide under atmosphere containing carrier gas, and heating at 1000-1100 degrees C for 1 hour. USE - Manufacture of zinc oxide/graphene photocatalyst used for treating industrial pollutants. ADVANTAGE - The method enables simple, efficient and economical manufacture of zinc oxide/graphene photocatalyst with excellent catalytic activity and stability. DETAILED DESCRIPTION - Manufacture of zinc oxide/graphene photocatalyst involves adding aqueous ammonia to 0.05-0.1 mol/L zinc nitrate hexahydrate until a white precipitate is completely dissolved to form growth medium, adding aqueous ammonia to 0.001-0.005 mol/L zinc nitrate hexahydrate until a white precipitate is completely dissolved to form seed crystal solution, adding seed crystal solution to an appropriate amount of graphene oxide, heating at 80-90 degrees C for 30 minutes, filtering, washing, drying at 120 degrees C for 1-2 hours, placing the dried samples in growth solution, heating at 80-90 degrees C for 1 hour, washing, drying to obtain zinc oxide/graphene oxide, reducing zinc oxide/graphene oxide under atmosphere containing carrier gas, and heating at 1000-1100 degrees C for 1 hour.