• 专利标题:   Method for forming graphene oxide pattern and graphene pattern, involves enabling contact between graphene oxide solution and patterning polydimethoxy silane stamp and drying, followed by enabling contact between dried stamp.
  • 专利号:   CN102653190-A
  • 发明人:   CHENG Q, HAN B, SUN S, WANG T, WU C, ZHOU D
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   B41M001/12
  • 专利详细信息:   CN102653190-A 05 Sep 2012 B41M-001/12 201315 Pages: 14 Chinese
  • 申请详细信息:   CN102653190-A CN10052417 04 Mar 2011
  • 优先权号:   CN10052417

▎ 摘  要

NOVELTY - A graphene oxide pattern and graphene pattern forming method involves enabling contact between graphene oxide solution and patterning polydimethoxy silane stamp for 1-500 minutes and drying, followed by enabling contact between the dried patterning polydimethoxy silane stamp and a substrate under external force of 0-5N for 1-500 minutes, removing the stamp to form a graphene oxide pattern on the substrate and enabling contact between a patterning polydimethoxy silane stamp, a binding agent and a substrate under external force of 0-5N. The stamp is removed to obtain the substrate. USE - Method for forming a graphene oxide pattern and a graphene pattern. ADVANTAGE - The method enables forming graphene oxide pattern and graphene pattern in a simple and inexpensive manner. DETAILED DESCRIPTION - A graphene oxide pattern and graphene pattern forming method involves enabling contact between graphene oxide solution and patterning polydimethoxy silane stamp for 1-500 minutes and drying, followed by enabling contact between the dried patterning polydimethoxy silane stamp and a substrate under external force of 0-5N for 1-500 minutes, removing the stamp to form a graphene oxide pattern on the substrate and enabling contact between a patterning polydimethoxy silane stamp, a binding agent and a substrate under external force of 0-5N. The stamp is removed to obtain the substrate, followed by enabling contact between the substrate after contact with graphene oxide solution and drying to form a graphene oxide pattern on the substrate.