• 专利标题:   Method for modifying wear-resistant graphene surface, involves preparing graphene by chemical vapor deposition process, and embedding column-shaped array structure into surface of grapheme.
  • 专利号:   CN103225076-A, CN103225076-B
  • 发明人:   GU Z, WU H, XU L, WANG J, GUO Y
  • 专利权人:   UNIV NANJING INFORMATION SCI TECHNOLOG
  • 国际专利分类:   C23C014/18, C23C016/26, C23C016/56, C23C028/00
  • 专利详细信息:   CN103225076-A 31 Jul 2013 C23C-028/00 201401 Pages: 9 Chinese
  • 申请详细信息:   CN103225076-A CN10172642 10 May 2013
  • 优先权号:   CN10172642

▎ 摘  要

NOVELTY - A wear-resistant graphene surface modification method involves preparing the graphene by a chemical vapor deposition process. The column-shaped array structure is embedded into the surface of the grapheme. The embedding step comprises placing a metal mask plate on the surface of the graphene, turning on a vacuum pump and vacuumizing, introducing high-purity argon until the gas pressure is 2-6 Pa and pre-bombarding a test sample. The pre-bombarded product is sputtered. A power supply of the source electrode is turned off, and the furnace is vacuumized, cooled and discharged from the furnace. USE - Method for modifying a wear-resistant graphene surface. ADVANTAGE - The method enables adopting a magnetron sputtering technology to embed metal elements into the surface of graphene to form a column-shaped array structure and reducing friction and prolonging wear-resistant life through surface micro-structuration. DETAILED DESCRIPTION - A wear-resistant graphene surface modification method involves preparing the graphene by a chemical vapor deposition process. The column-shaped array structure is embedded into the surface of the grapheme. The embedding step comprises placing the graphene and a substrate into a magnetron sputtering furnace and placing a metal mask plate on the surface of the graphene, where the metal mask plate is provided with holes arranged in an array mode and a source electrode is a 99.99% pure metal target, and turning on a vacuum pump, vacuumizing in the magnetron sputtering furnace to the ultimate vacuum of 1-5x 10-5Pa, introducing high-purity argon until the gas pressure is 2-6 Pa and pre-bombarding a test sample for about 1-3 minutes. The pre-bombarded product is sputtered under the power of 30-80 W at room temperature for 10 to 15 minutes. A power supply of the source electrode is turned off, and the furnace is vacuumized to ultimate vacuum, cooled to room temperature and discharged from the furnace.