▎ 摘　　要

NOVELTY - A low-power charge trapping memory has silica tunneling layer, capture layer containing graphene oxide quantum dots-zirconium-hafnium composite (I), silica barrier layer and palladium top electrode. USE - Low-power charge trapping memory used for electronic device. ADVANTAGE - The low-power charge trapping memory has low operating voltage, excellent fatigue resistance and durability, and low charge leakage and power consumption. DETAILED DESCRIPTION - A low-power charge trapping memory has silica tunneling layer, capture layer containing graphene oxide quantum dots-zirconium-hafnium composite of formula: GQODs/Zr0.5Hf0.5O2 (I), silica barrier layer and palladium top electrode. An INDEPENDENT CLAIM is included for preparation of low-power charge trapping memory.