▎ 摘　　要

NOVELTY - Preparation of multilayered single crystal graphene involves carrying out electrochemical polishing of copper substrate for 1-5 minutes, washing, drying with high purity nitrogen, placing the treated substrate in reaction chamber of chemical vapor deposition apparatus, evacuating, removing residual gas, filling high purity hydrogen, heating at 150-300 degrees C for 10-30 minutes, evacuating, removing the substrate, further heating at 900-1075 degrees C, filling methane in chamber, processing at 900-1075 degrees C for 5-300 minutes, cooling, and growing 1-5 layers of graphene. USE - Preparation of multilayered single crystal graphene (claimed). ADVANTAGE - The single crystal graphene having high quality is prepared. DETAILED DESCRIPTION - Preparation of multilayered single crystal graphene involves carrying out electrochemical polishing of copper substrate for 1-5 minutes, washing with deionized water and ethanol, drying with high purity nitrogen, placing the treated substrate in reaction chamber of chemical vapor deposition apparatus, evacuating at 101 to 104 Pa, removing residual gas, filling high purity hydrogen, heating at 150-300 degrees C and 1 Pa to 103 Pa for 10-30 minutes, evacuating, removing the substrate, further heating at 900-1075 degrees C and 1 Pa to 103 Pa, filling methane in chamber, processing at 900-1075 degrees C for 5-300 minutes, naturally cooling, growing 1-5 layers of graphene, reducing temperature to less than 100 degrees C, filling argon gas, and removing sample.