• 专利标题:   Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.
  • 专利号:   KR2016095423-A, KR1651510-B1
  • 发明人:   KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, H01L027/115
  • 专利详细信息:   KR2016095423-A 11 Aug 2016 201665 Pages: 12
  • 申请详细信息:   KR2016095423-A KR016660 03 Feb 2015
  • 优先权号:   KR016660

▎ 摘  要

NOVELTY - A non-volatile memory device consists of a substrate, a lower electrode, an active layer containing a metal oxide-graphene quantum dots and an organic polymer material, and an upper electrode, in order. USE - Non-volatile memory device (claimed). ADVANTAGE - The non-volatile memory device has excellent electrical characteristics, voltage operating characteristics and stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of non-volatile memory device.