▎ 摘　　要

NOVELTY - The gate has a substrate and a buffer layer formed as a rectangular-shaped structure, where long side direction of the substrate is defined as the left and right direction and width direction of the substrate is defined as longitudinal direction. The buffer layer is paved on a front end surface of an upper surface of the substrate. The buffer layer and a front end surface of the substrate are located on a same plane. A left end surface of a rectangular straight waveguide is fixed with a first output end of a Feynman gate body. A second output end of the Feynman gate body is fixed to a rear end surface of another rectangular straight waveguide. The rectangular straight waveguides are made of Silicon dioxide. USE - Graphene-surface plasma excimer based Feynman gate. ADVANTAGE - The gate greatly reduces size, and has compact structure, and is conducive to on-chip integration. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene-surface plasma excimer based Feynman gate.