• 专利标题:   Method for manufacturing graphene that is utilized in e.g. semiconductor, involves mixing organic compound and graphite with reaction medium containing poly phosphate and phosphorus pentoxide.
  • 专利号:   KR2011119429-A, KR1159754-B1
  • 发明人:   CHOI E K, JEON I Y, BAE S Y, BAEK J B
  • 专利权人:   UNIST ACADIND RES CORP
  • 国际专利分类:   C01B031/00, C01B031/02, C07C229/60
  • 专利详细信息:   KR2011119429-A 02 Nov 2011 C01B-031/02 201308 Pages: 12
  • 申请详细信息:   KR2011119429-A KR039133 27 Apr 2010
  • 优先权号:   KR039133

▎ 摘  要

NOVELTY - A graphene manufacturing method involves mixing organic compound and graphite with reaction medium containing poly phosphate and phosphorus pentoxide, where the organic compound comprises a functional group that is chosen from carboxylic acid group, amide group, sulfonic acid group, carbonylchloride group or carbonyl bromide group, and a covalent bond between the organic compound and carbonyl bromide group is replaced to edge location of graphene functional group. USE - Method for manufacturing graphene. Uses include but are not limited to utilize grahene in a semiconductor, a silicone manufacturing process, a solar cell wafer, an indium tin oxide transparent electrode, a hydrogen reservoir, an optical fiber, and an electrical device. ADVANTAGE - The method enables preparing graphene with high purity in an easy manner by chemical ablation and mechanical exfoliation processes. The method enables preventing the graphene and graphite from being damaged. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view illustrating a method for manufacturing graphene. '(Drawing includes non-English language text)'