▎ 摘　　要

NOVELTY - The method involves forming a catalyst layer (CT1) on a first substrate (SUB1). A graphene layer is formed on the catalyst layer. A protection metal layer is formed on the graphene layer. A supporter is attached to the protection metal layer. The first substrate is separated from the catalyst layer such that the protection metal layer, the graphene layer and the catalyst layer remain on the supporter. The catalyst layer is removed from the supporter. The protection metal layer and the graphene layer are transferred from the supporter to a second substrate. USE - Method for transferring graphene during manufacturing a graphene applied device that is used in electronic devices and/or semiconductor apparatuses such as display and high speed radio frequency (RF) switching device. ADVANTAGE - The method enables inhibiting shape of the supporter from being modified due to stress when the supporter has large size, so that risk of exfoliation and damage of the graphene layer can be prevented and minimized, thus facilitating easy transfer of graphene without generating pollution. The method enables forming the protection metal layer with excellent contact characteristics to the graphene so as to improve performance of a graphene applied device. DETAILED DESCRIPTION - The first and second substrates are wafer level substrates. The protection metal layer is made from one of gold, copper, nickel, titanium, iron, ruthenium, palladium and aluminum. An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene applied device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a substrate during graphene transfer process. Catalyst layer (CT1) Substrate (SUB1) Underlayer (UL1)