• 专利标题:   Graphene-reinforced silicon carbide-based complex material comprises a three dimensional porous graphene and silicon carbide grown in-situ in three-dimensional porous graphene.
  • 专利号:   CN109095926-A
  • 发明人:   YANG J, HUANG K, DONG S, DING Y, WANG Z
  • 专利权人:   SHANGHAI INST CERAMICS CHINESE ACAD SCI
  • 国际专利分类:   C04B035/565, C04B035/626, C04B035/78, B33Y010/00, B33Y070/00
  • 专利详细信息:   CN109095926-A 28 Dec 2018 C04B-035/565 201912 Pages: 9 Chinese
  • 申请详细信息:   CN109095926-A CN10863875 01 Aug 2018
  • 优先权号:   CN10863875

▎ 摘  要

NOVELTY - Graphene-reinforced silicon carbide-based complex material comprises a three dimensional porous graphene and silicon carbide grown in-situ in three-dimensional porous graphene, where the content of three-dimensional porous graphene is less than or equal to 50 vol%, preferably 10-50 vol%. USE - Used as graphene-reinforced silicon carbide-based complex material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the material, comprising taking methyltrichlorosilane and methyl dichlorosilane as a precursor and hydrogen as a carrier gas, performing the three-dimensional porous graphene to densification treatment by chemical vapor infiltration technique.