▎ 摘　　要

NOVELTY - The semiconductor device (100a) has a substrate (102) having a front surface and a back surface. An interconnect structure comprises a first dielectric layer (104) that is formed below the front surface of the substrate. A first graphene layer comprises a first portion (110a) in the first dielectric layer and a second portion (110b) below the first dielectric layer. A first insulating layer is formed over the first portion of the first graphene layer. A through-silicon-via (TSV) is electrically connected to the U-shaped first graphene layer. USE - Semiconductor devices for electronic application e.g. personal computer, cell phone and digital camera. ADVANTAGE - The high reliability is provided and a good adhesion is provided between the first dielectric layer and the first insulating layer. The number of graphene layers and the number of dielectric layers are adjusted according to actual application. The performance of the semiconductor device structure is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of forming a semiconductor device structure. Semiconductor device (100a) Substrate (102) First dielectric layer (104) First portion of first graphene layer (110a) Second portion of first graphene layer (110b)