▎ 摘　　要

NOVELTY - Semiconductor device comprises a substrate (102), a fin structure (104) on the substrate, comprising an epitaxial region (105), a metal contact above the epitaxial region, and a graphene film covering a top surface and sidewalls of the epitaxial region and covering a bottom surface and sidewalls of the metal contact. USE - Semiconductor device. ADVANTAGE - The semiconductor device has higher storage capacity, faster processing systems, higher performance, and lower costs. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming a semiconductor device, which involves forming a fin structure with an epitaxial layer on a substrate, forming a first graphene film covering a top surface and sidewalls of the epitaxial region, forming a metal contact above the epitaxial region, and forming a second graphene film covering a bottom surface and sidewalls of the metal contact. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the field effect transistors. 100Field effect transistors 102Substrate 104Fin structure 105Epitaxial region 110Contacts