▎ 摘　　要

NOVELTY - A synchronous doping method in a chemical vapor deposition (CVD) graphene growth process involves (s1) preparing a substrate, performing doping element deposition on the surface of a copper foil to deposit trace elements on the surface to form a doping element film, and carrying out high-temperature annealing to obtain a copper alloy foil with uniform texture as the substrate, (s2) transferring the substrate into a normal pressure CVD growth furnace, introducing protective gas to enable a reaction area of the normal pressure CVD growth furnace to be in protective atmosphere, heating the furnace, raising the temperature of the reaction zone, adding the reaction gas to enable carbon element in the reaction gas to gradually depositing and growing on the substrate and obtaining the doped graphene. USE - Synchronous doping method in chemical vapor deposition graphene growth process. ADVANTAGE - The synchronous doping method is simple, easy to control and has excellent repeatability.