▎ 摘　　要

NOVELTY - The method involves supplying carbon-included gas. The low-pressure chemical vapor deposition process is performed. The graphene is grown in the state without the adsorption of the hydrocarbon radicals, the generation of the van der Waals type heteroepitaxial growth on the surface of the substrate and the diffusion of the catalyst layer on the substrate. USE - Manufacturing method of non-catalytic graphene growth substrate for manufacturing electronic component (all claimed). ADVANTAGE - The efficiency of the manufacturing process of the non-catalytic graphene growth substrate is improved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a non-catalytic graphene growth substrate; (2) a manufacturing method of electronic component; and (3) a manufacturing device of non-catalytic graphene growth substrate.