▎ 摘　　要

NOVELTY - The transistor has a buffer layer (4) that is provided between an electrode (5) and a semiconductor layer (3), and is used to realize the ohmic contact between the electrode and the semiconductor layer. The buffer layer uses buffer material which includes one of graphene, nanocrystalline graphene, graphene, metal phthalocyanine compound, and thiophene derivative. The metal phthalocyanine compound includes one of copper phthalocyanine, nickel phthalocyanine, zinc phthalocyanine, cobalt phthalocyanine, platinum phthalocyanine, copper phthalocyanine, zinc fluorophthalocyanine, iron phthalocyanine, fluorophthalocyanine and cobalt. The thiophene derivative includes one of thiophene oligomer, polythiophene, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid), and fluorinated oligothiophene. The material of the electrode includes one of indium tin oxide, aluminum, magnesium, silver, tantalum, titanium, chromium, molybdenum, sopper, gold, and platinum. USE - Thin film transistor. ADVANTAGE - The working function of the metal electrode or semiconductor material is increased, so as to make the metal electrode and the contact layer of the Schottky is contact into ohmic. The contact resistance is reduced, and the current contact obviously increased. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the thin film transistor. Conductive substrate (1) Dielectric layer (2) Semiconductor layer (3) Buffer layer (4) Electrode (5)