▎ 摘　　要

NOVELTY - Preparing silicon based substrate heterogeneous integrated graphene, comprises (i) providing silicon based substrate, then forming dielectric layer on the surface of the silicon based substrate, providing composite structure, where the composite structure includes sacrificial substrate and metal layer which is covered on the surface of the sacrificial substrate, then depositing the graphene film on the upper surface of the composite structure to form graphene layer covers the metal layer, and (ii) bonding the side of the silicon based substrate covered with the dielectric layer to the side of the composite structure which is covered with the graphene film, then etching the metal layer to achieve the separation of the sacrificial substrate, and then transferring that the graphene film to the silicon based substrate. USE - The method is useful for preparing silicon based substrate heterogeneous integrated graphene. ADVANTAGE - The method: solves problem of difficult in size control of existing graphene film, problem of substrate material and general technique are not compatible.