• 专利标题:   Patterned graphene film manufacturing method, involves cleaning graphene layer by generating ultrasonic wave, removing end of graphite on substrate, and performing oxidation process to obtain graphene thin film.
  • 专利号:   CN104576515-A, CN104576515-B
  • 发明人:   LI J, LI H, SONG S, XIAO A
  • 专利权人:   BEIJING BOE OPTOELECTRONIC CO LTD, BEIJING BOE OPTOELECTRONIC CO LTD
  • 国际专利分类:   H01L021/768, H01L023/532
  • 专利详细信息:   CN104576515-A 29 Apr 2015 H01L-021/768 201550 Pages: 13 Chinese
  • 申请详细信息:   CN104576515-A CN10575147 15 Nov 2013
  • 优先权号:   CN10575147

▎ 摘  要

NOVELTY - The method involves forming a graphene layer in a substrate. The graphene layer is coated with light sensitive material. Patterning process is performed to obtain a graphene layer image. The graphene layer is provided with a thin film. The thin film is removed. The light sensitive material is exposed into an oxidation graphene layer. The graphene layer is arranged with the substrate. The graphene layer is cleaned by generating ultrasonic wave. An end of a graphite on the substrate is removed. Oxidation process is performed to obtain a graphene thin film. USE - Patterned graphene film manufacturing method. ADVANTAGE - The method enables reducing substrate manufacturing difficulties and increasing processing line width and resolution ratio. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an array base plate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a patterned graphene film manufacturing method. '(Drawing includes non-English language text)'