▎ 摘　　要

NOVELTY - The device comprises microelectronic components (104) embedded in a single crystalline dielectric material (106). The dielectric material contains carbon with a diamond structure or hexagonal boron nitride with a graphene structure and epitaxially deposited on a crystalline substrate (100) by vapor phase deposition. At least a portion of the components are formed using materials epitaxial deposited on the crystalline substrate. The components include transistors and/or metal interconnects including metal wirings including a substantially crystalline metal. The semiconductor material is silicon, silicon germanide, germanium tin, or transition metal dichalcogenides. USE - Semiconductor device i.e. monolithic three-dimensional integrated circuit. ADVANTAGE - The semiconductor device has increased performance at reduced power compared to the current highly scaled integrated circuits in production, and can be integrated monolithically. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for forming a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device. Crystalline substrate (100) Microelectronic components (104) Single crystalline dielectric material (106) Crystalline layer (108) Airgaps (110)