▎ 摘　　要

NOVELTY - Seamless transferring large-area graphene involves taking 25 mu m copper foil, performing chemical vapor deposition for high-quality graphene growth, spin coating with 100 mg/mL poly(methyl methacrylate), baking at 168-170 degrees C for 4.6-5 minutes to obtain first component, taking epoxy AB glue comprising main agent and hardener at mass ratio of 1:1, roll coating on clean polyethylene terephthalate surface as substrate to obtain second component, combining two components, baking at 120-130 degrees C, etching, washing graphene film with deionized water and dilute hydrochloric acid respectively and drying. USE - Method for seamless transferring large-area graphene. ADVANTAGE - The graphene has 219-300 Omega sq-1 surface resistance and 96% light transmittance. The method is simple, has low production cost, and is suitable for continuous operation. DETAILED DESCRIPTION - Seamless transferring large-area graphene comprises taking 25 mu m copper foil, performing chemical vapor deposition for high-quality graphene growth, spin coating with 100 mg/mL poly(methyl methacrylate), baking at 168-170 degrees C for 4.6-5 minutes to obtain first component, taking epoxy AB glue comprising main agent and hardener at mass ratio of 1:1, roll coating on clean polyethylene terephthalate surface as substrate to obtain second component, combining two components, baking at 120-130 degrees C for 76-80 minutes, etching with 1 mol/L ferric chloride solution, washing graphene film with deionized water and dilute hydrochloric acid respectively and drying.