• 专利标题:   Light-wave micro vacuum transistor, has metal electrode electrically connected between graphene material plate, where lower part of graphene material plate is etched with silicon dioxide material layer and connected with tungsten electrode wire.
  • 专利号:   CN209785871-U
  • 发明人:   WEI K, HUANG C, SU J
  • 专利权人:   SHENZHEN CHANSHENG IND DEV CO LTD
  • 国际专利分类:   H01J019/06, H01J019/16, H01J021/10
  • 专利详细信息:   CN209785871-U 13 Dec 2019 H01J-021/10 201998 Pages: 7 Chinese
  • 申请详细信息:   CN209785871-U CN20957633 25 Jun 2019
  • 优先权号:   CN20957633

▎ 摘  要

NOVELTY - The utility model claims a light-wave micro vacuum triode, comprising: micro heat anode plate, cathode plate. The micro heat layer of gate material and the conductive film, the micro heat cathode plate and micro heat anode plate is etched with a conductive film. the upper part of said conductive film by chemical vapor deposition with a vacuum channel, the upper part of the vacuum channel is covered with oxide-mixed material, the micro hot cathode plate and micro heat anode plate each comprise a pair of metal electrode composed of Au, the metal electrode is electrically connected between the graphene material plate, lower part of said graphene material plate is etched with a silicon dioxide material layer, using nanometer gap vacuum channel to realize the transmission of electrons, has the advantages of vacuum tube and semiconductor transistor, grid with modulating effect, optimizing the device characteristics, has low work voltage, response time is short, the emission current can be largely modulated, good controllability and so on.