• 专利标题:   Graphite base with silicon carbide coating, has silicon carbide film deposited on surface of disc-shaped graphite baseand graphene film or refractory metal carbide layer deposited outside silicon carbide film, or refractory metal carbide layer deposited on the surface of graphite base.
  • 专利号:   CN114368982-A
  • 发明人:   WU H, WEI Q, WANG Z, LI J, YAO D, ZHANG D
  • 专利权人:   GONGYI FANRUIYIHUI COMPOSITE MATERIALS
  • 国际专利分类:   C04B041/87
  • 专利详细信息:   CN114368982-A 19 Apr 2022 C04B-041/87 202246 Chinese
  • 申请详细信息:   CN114368982-A CN10072526 21 Jan 2022
  • 优先权号:   CN10072526

▎ 摘  要

NOVELTY - The graphite base with a silicon carbide coating has a disc-shaped graphite base (4). A silicon carbide film is deposited on the surface of the graphite base. A graphene film or a refractory metal carbide layer is deposited outside the silicon carbide film, or the refractory metal carbide layer is deposited on the surface of the graphite base. USE - Graphite base with a silicon carbide coating. ADVANTAGE - The silicon carbide coating is conveniently formed outside the refractory metal carbide layer or the graphene film. The graphene film or the refractory metal carbide layer is deposited on the surface of the graphite base, so that the specific surface area of the surface of the matrix is greatly improved, more nucleation sites are formed on the surface of the substrate. The aggregation degree of silicon carbide crystal grains is reduced when the silicon carbide coating is deposited. The crystal grains of the silicon carbide coating are distributed more uniformly and compactly, and the thermal shock resistance and the corrosion resistance of the graphite base with the silicon carbide coating are improved. Nitrogen is introduced to blow the deposition chamber. Deposited larger silicon carbide coating particles can be blown off, and small particles are reserved, so that the purpose of grain refinement is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of the graphite base with a silicon carbide coating DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a chemical vapor deposition chamber. Deposition chamber (1) Base (2) Placing cavity (3) Graphite base (4) Lower interface (5) Air outlet (6) Tungsten needle (7) Tungsten column (8) Air inlet (9) Gas diffusion chamber (10)