▎ 摘　　要

NOVELTY - An oxide-based graphene changeable memory comprises bottom electrode, a top electrode and a resistance changeable functional layer between the two electrodes, where the resistance changeable function layer is doped with titanium oxide nano-particles of graphene oxide ethanol solution on magnetic stirrer for stirring, spin coating the bottom electrode surface, forming film and irradiating with UV light. USE - Oxide-based graphene changeable memory. ADVANTAGE - The memory has high stability resistance, effectively reduces the power dissipation in the filament forming process, and high working stability.