▎ 摘　　要

NOVELTY - Method for measuring a thickness of a graphene layer directly grown on a silicon substrate involves obtaining signal intensities from the graphene layer grown on the silicon substrate in response to emitting X-ray radiation toward the graphene layer directly grown on the silicon substrate using the X-ray photoelectron spectroscopy instrument, and calculating the thickness of the graphene layer according to an equation defined in the specification, or method for measuring a thickness of a graphene layer directly grown on a silicon substrate such that an interface layer is formed between the silicon substrate and graphene layer, involves obtaining signal intensities from the graphene layer directly grown on the silicon substrate in response to emitting X-ray radiation toward the graphene layer grown on the silicon substrate using the X-ray photoelectron spectroscopy instrument, and calculating the thickness of the graphene layer according to an equation defined in the specification. USE - The method is useful for measuring thickness of graphene layer directly grown on silicon substrate. ADVANTAGE - The method accurately calculates the thickness of the graphene layer directly grown on the silicon substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of measuring a content of silicon carbide included in an interface layer between a silicon substrate and a graphene layer directly grown on the silicon substrate, involving measuring the content of the silicon carbide using a spectrum of a photoelectron beam emitted from the silicon substrate using X-ray photoelectron spectroscopy.