• 专利标题:   Hardmask composition for pattern formation comprises a set of graphene nanosheets, each being doped with boron and/or nitrogen, and a solvent.
  • 专利号:   US2016282721-A1, KR2016114446-A, US10133176-B2
  • 发明人:   SEOL M, KIM S, SHIN H, PARK S, CHO Y, SEOL M S, KIM S W, SHIN H J, PARK S J, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   G03F007/11, H01L021/027, G03F007/09
  • 专利详细信息:   US2016282721-A1 29 Sep 2016 G03F-007/11 201667 Pages: 19 English
  • 申请详细信息:   US2016282721-A1 US825792 13 Aug 2015
  • 优先权号:   KR040963

▎ 摘  要

NOVELTY - A hardmask composition comprises a set of graphene nanosheets, each being doped with boron (B) and/or nitrogen (N), and a solvent. USE - A hardmask composition for pattern formation (claimed). ADVANTAGE - The hardmask composition has improved (chemical) stability, etching resistance, and increased transparency compared to those of a polymer or amorphous carbon. When the hardmask including the graphene nanosheet is used, an align mark may be more easily recognized during formation of a pattern on an etching layer, allowing for finer and uniform pattern to be obtained. When the hardmask with improved transmittance is used, detection of an align mark for pattering a hardmask pattern and a to-be-etched layer becomes easier, allowing for patterning of an etching layer with a relatively fine and compact pattern size to be performed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of a pattern (11a) which involves forming etching layer on substrate (10), providing hardmask composition on etching layer to form a hardmask, forming photoresist layer on hardmask, forming hardmask pattern by patterning hardmask using the photoresist layer as an etching mask, and etching the etching layer using the hardmask pattern as an etching mask. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the formed pattern using a hardmask composition. Substrate (10) Etching layer pattern (11a)