▎ 摘　　要

NOVELTY - A hardmask composition comprises several graphene nanoparticles having a size of 5-100 nm, and a solvent. USE - Hardmask composition is used for forming pattern (claimed) e.g. inorganic reflection prevention pattern and organic reflection prevention pattern in manufacture and design of semiconductor integrated circuit device, and formation of patterned material layer structure e.g. metal lining, holes for contact or bias, insulation sections (damascene trench or shallow trench isolation), and trench for capacitor structure. ADVANTAGE - The hardmask composition is efficiently manufactured with excellent stability and etching resistance. The graphene nanoparticles in hardmask composition have improved solvent dispersibility. When hardmask with improved transmittance is used, the align mark is easily sensed during formation of pattern of etching layer, and the to-be-etched layer is patterned in finer and more compact pattern size. When temperature increasing rate is 1-1000 degrees C/minute, the deposited layer is not damaged due to rapid temperature change. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of pattern, which involves forming an etching layer on a substrate (20), forming a hardmask layer including graphene nanoparticles by providing a hardmask composition on the etching layer, forming a photoresist layer on the hardmask layer, forming a hardmask including graphene nanoparticles by patterning the hardmask layer, carrying out patterning by etching the graphene nanoparticles using the photoresist layer as an etching mask and etching the etching layer using the hardmask as an etching mask. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the formation of pattern using hardmask composition. Substrate (20) Etching layer pattern (21a) Hardmask pattern (22a)