▎ 摘 要
NOVELTY - The method involves transferring (101) graphene by a wet method. The electron beam deposition are used (102) to deposit 2nm thick gold (Au) on the graphene. The gold-induced chemical vapor deposition is used (103) to prepare silicon nanowires on graphene under hydrogen (H2) atmosphere and argon (Ar) atmosphere. A small piece of graphene material is cut out, the graphene material is flatten with two glass slides, and waited to be used. The dried graphene material is put in acetone, then put that in a water bath, and a deionized water bath is used at 50 degrees C for 20 minutes. The beaker is taken out after the water bath and the graphene material is cooled to room temperature naturally. The graphene is taken out and placed in acetone to clean again. The graphene is taken out and dried after completion. USE - Method for preparing silicon nanowires using graphene. ADVANTAGE - The absorption rate of visible light and near-infrared light in the heterojunction is increased by using the silicon nanowires, and the carrier lifetime of the heterojunction is extended. The electrical characteristics of the device are improved by the high transmittance and high conductivity of graphene. The silicon nanowires on the prepared graphene have a relatively high lifetime, light absorption rate and light conversion rate. The flexible characteristics of graphene and silicon nanowires enable graphene/silicon nanowire hetero-junctions to be used in the field of flexible detection, thereby the new application possibilities for graphene and silicon nanowires are opened up. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing silicon nanowires on graphene. (Drawing includes non-English language text) Step for transferring graphene by a wet method (101) Step for using electron beam deposition to deposit thick gold on the graphene (102) Step for using the gold-induced chemical vapor deposition to prepare silicon nanowires on graphene under hydrogen atmosphere and argon atmosphere (103)