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  • 专利标题:   Graphene photonic crystal terahertz amplifier, has crystal silicon layer stacked with graphene, where crystal silicon layer and graphene are arranged in positive electrode and negative electrode and provided with photon crystal structure.
  • 专利号:   CN104793427-A, CN104793427-B
  • 发明人:   CHANG S, FAN F
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   G02B006/122, G02F001/39, H01S001/02
  • 专利详细信息:   CN104793427-A 22 Jul 2015 G02F-001/39 201568 Pages: 9 Chinese
  • 申请详细信息:   CN104793427-A CN10246286 13 May 2015
  • 优先权号:   CN10246286

▎ 摘　　要

NOVELTY - The amplifier has a crystal silicon layer (2) stacked with a graphene (1), where the crystal silicon layer and the graphene are arranged in a positive electrode (3) and a negative electrode (4) and provided with a photon crystal structure. USE - Graphene photonic crystal terahertz amplifier. ADVANTAGE - The amplifier has high amplifying efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene photonic crystal terahertz amplifier. Graphene (1) Crystal silicon layer (2) Positive electrode (3) Negative electrode (4)