▎ 摘　　要

NOVELTY - Direct growth method of multilayer graphene through pressure heat treatment comprises (a) forming an etch stop layer on silicon substrate, seed layer made of amorphous boron, boron nitride (BN), bicyclononyne (BCN), boron carbide (B4C) and/or (Me-X) (I) (b) forming metal catalyst layer on seed layer, (c) forming amorphous carbon layer on metal catalyst layer and (d) directly growing multilayer graphene on the seed layer by interlayer exchange between metal catalyst layer and amorphous carbon layer through pressurized heat treatment. USE - The method is useful for direct growth of multilayer graphene through pressure heat treatment. ADVANTAGE - The method improves degree of integration of semiconductor devices, provides good bonding strength, controls thickness, physical properties and chemical composition and minimizes defects while having best transmittance. DETAILED DESCRIPTION - Directly growing multilayer graphene through pressure heat treatment, comprises (a) forming an etch stop layer on the silicon substrate, (b) forming a seed layer with at least one of amorphous boron material containing BN, BCN, B4C, and metal halide of formula (M-X) (I) on the etch stop layer, (c) forming a metal catalyst layer on the seed layer, (d) forming an amorphous carbon layer on the metal catalyst layer, and (e) directly growing multilayer graphene on the seed layer by performing interlayer exchange between the metal catalyst layer and the amorphous carbon layer through a pressure heat treatment. Me=Si, Ti, Mo or Zr; and X=B, C or N. An INDEPENDENT CLAIM is also included for manufacturing pellicle for extreme ultraviolet exposure comprising (i) forming core layer by directly growing multilayer graphene on silicon substrate by pressure heat treatment, (ii) forming capping layer on core layer and (iii) removing central portion of silicon substrate under the core layer to form opening through which the core layer is exposed.