• 专利标题:   Low-temperature plasma preparation of graphene by placing pair of electrodes on opposite ends of reactor, placing metal foil substrate, passing through hydrogen gas, passing through carbon source-containing gas and carrier gas, and ionizing.
  • 专利号:   CN104773725-A
  • 发明人:   CHEN W, FENG J, ZHANG B, ZHANG F, ZHENG J, YUN D, WU J, CHENG Q
  • 专利权人:   UNIV XIAMEN
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104773725-A 15 Jul 2015 C01B-031/04 201570 Pages: 8 Chinese
  • 申请详细信息:   CN104773725-A CN10165689 09 Apr 2015
  • 优先权号:   CN10165689

▎ 摘  要

NOVELTY - Low-temperature plasma preparation of graphene comprises providing reactor, placing pair of electrodes on opposite ends of reactor, placing metal foil substrate, passing through hydrogen gas, and heating to 500-1000 degrees C to carry out reduction treatment; and passing through carbon source-containing gas and carrier gas, applying voltage across the electrodes, ionizing carbon source-containing gas through capacitive coupled plasma discharge mode for 1-30 minutes, and cooling to room temperature. USE - Method for low-temperature plasma preparation of graphene (claimed). ADVANTAGE - The method is simple, and has low growing temperature of graphene and low cost. The graphene has controllable appearance, good homogeneity, and stable performance.