▎ 摘　　要

NOVELTY - Preparing graphene sponge grid structure with high electron transmittance comprises preparing graphene on the surface of the porous metal sponge structure, removing the metal sponge by wet etching method, forming a porous graphene sponge net, transferring it to the film hole of the metal electrode, and forming graphene sponge grid structure with high electron transmittance, where the graphene sponge grid structure comprises graphene sponge net and metal electrode with film hole. USE - The method is useful for preparing graphene sponge grid structure with high electron transmittance. ADVANTAGE - The method: utilizes low electron scattering effect and high conduction characteristic of graphene material, and reinforcing adhesive force between the grid structure; reduces resistivity so as to improve electron transmittance and stability of the gate; and has important application value in the field of field emission electron source and electron microscopy field of high resolution. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the graphene sponge grid structure.