• 专利标题:   Method for quickly manufacturing graphene thin film on e.g. silicon wafer, involves covering non-metal substrate on two surfaces of conductive material, placing interlayer in electrode discharge chamber, and performing discharge treatment on interlayer in vacuum state.
  • 专利号:   CN114506843-A, CN114506843-B
  • 发明人:   ZHOU C, QING F, LI X
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN114506843-A 17 May 2022 C01B-032/184 202258 Chinese
  • 申请详细信息:   CN114506843-A CN10175355 25 Feb 2022
  • 优先权号:   CN10175355

▎ 摘  要

NOVELTY - The method involves covering a non-metal substrate on two surfaces of a conductive material with carbon source organic reagents coated on the surfaces to form a non-metal substrate/carbon source organic reagent/conductive material/carbon source organic reagent/non-metal substrate interlayer. The obtained interlayer is placed in an electrode discharge chamber. Discharge treatment is performed on the interlayer in a vacuum state, where the carbon source organic reagent is a carbon-containing liquid organic reagent, and the conductive material comprises one of a graphene felt, a carbon fiber cloth and a metal foil. USE - Method for quickly manufacturing a graphene thin film on a non-metal substrate e.g. silicon wafer, quartz plate, boron nitride substrate, glass substrate, alumina substrate, a silicon wafer with a silica coating, mica plate and sapphire substrate (all cliamed). ADVANTAGE - The method enables using large current to generate high temperature in graphene paper so as to grow the graphene thin film on the non-metal substrate in short time, thus effectively solving problem of long time and high cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an interlayer structure . (Drawing includes non-English language text).